PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 3A maximum collector current and 25V collector-emitter breakdown voltage. Operates with a 100MHz transition frequency and exhibits a minimum hFE of 300. Housed in a SOT-223 surface-mount plastic package, this silicon transistor is RoHS compliant and operates across a temperature range of -55°C to 150°C.
Frequency100MHz
PackageSOT-223
MountingSurface Mount
PolarityPNP
Quick Jump:
Technical Specifications
Diodes DPLS325E-13 technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
25V
Collector Emitter Breakdown Voltage
25V
Collector Emitter Voltage (VCEO)
25V
Collector-emitter Voltage-Max
500mV
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
1.6mm
hFE Min
300
Length
6.5mm
Max Breakdown Voltage
25V
Max Collector Current
3A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
1W
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
100MHz
Weight
0.000282oz
Width
3.5mm
Compliance
RoHS
Compliant
Datasheet
Diodes DPLS325E-13 Datasheet
Download the complete datasheet for Diodes DPLS325E-13 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
