PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 3A maximum collector current and 25V collector-emitter breakdown voltage. Operates with a 100MHz transition frequency and exhibits a minimum hFE of 300. Housed in a SOT-223 surface-mount plastic package, this silicon transistor is RoHS compliant and operates across a temperature range of -55°C to 150°C.
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Diodes DPLS325E-13 technical specifications.
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 25V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 1.6mm |
| hFE Min | 300 |
| Length | 6.5mm |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Weight | 0.000282oz |
| Width | 3.5mm |
| RoHS | Compliant |
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