PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 3A maximum collector current and 50V collector-emitter breakdown voltage. Operates with a transition frequency of 100MHz and a maximum power dissipation of 1W. Packaged in a GREEN SOT-223 surface mount plastic package, this component is RoHS and REACH SVHC compliant.
Frequency100MHz
PackageSOT-223
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes DPLS350E-13 technical specifications.
General
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Emitter Base Voltage (VEBO) | -6V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 1.65mm |
| Length | 6.7mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Weight | 0.000282oz |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DPLS350E-13 Datasheet
Download the complete datasheet for Diodes DPLS350E-13 to view detailed technical specifications.
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