PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 3A maximum collector current and 50V collector-emitter breakdown voltage. Operates with a transition frequency of 100MHz and a maximum power dissipation of 1W. Packaged in a GREEN SOT-223 surface mount plastic package, this component is RoHS and REACH SVHC compliant.
Frequency100MHz
PackageSOT-223
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes DPLS350E-13 technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
-300mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
300mV
Emitter Base Voltage (VEBO)
-6V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
1.65mm
Length
6.7mm
Max Breakdown Voltage
50V
Max Collector Current
3A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
100MHz
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes DPLS350E-13 Datasheet
Download the complete datasheet for Diodes DPLS350E-13 to view detailed technical specifications.
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