
PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 140V collector-emitter breakdown voltage and a maximum collector current of 4A. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1W. This component offers a transition frequency of 150MHz and is packaged in a SOT-223 case, supplied on tape and reel. RoHS compliant and lead-free.
Diodes DPLS4140E-13 technical specifications.
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | -180V |
| Collector Emitter Breakdown Voltage | 140V |
| Collector Emitter Saturation Voltage | -360mV |
| Collector-emitter Voltage-Max | 360mV |
| Emitter Base Voltage (VEBO) | -7V |
| Gain Bandwidth Product | 150MHz |
| Height | 1.6mm |
| Lead Free | Lead Free |
| Length | 6.5mm |
| Max Breakdown Voltage | 140V |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| Weight | 0.000282oz |
| Width | 3.5mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DPLS4140E-13 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
