PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 140V collector-emitter breakdown voltage and a maximum collector current of 4A. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1W. This component offers a transition frequency of 150MHz and is packaged in a SOT-223 case, supplied on tape and reel. RoHS compliant and lead-free.
Diodes DPLS4140E-13 technical specifications.
Download the complete datasheet for Diodes DPLS4140E-13 to view detailed technical specifications.
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