NPN bipolar junction transistor featuring 80V collector-emitter breakdown voltage and 500mA maximum collector current. This silicon transistor offers a 100MHz gain bandwidth product and 250mV collector-emitter saturation voltage. Housed in a compact SOT-363 plastic package, it supports surface mounting and operates within a temperature range of -55°C to 150°C. The component is lead-free and RoHS compliant.
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Diodes DRDN005W-7 technical specifications.
| Package/Case | SOT-363 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 4V |
| Gain Bandwidth Product | 100MHz |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 80V |
| Weight | 0.000212oz |
| Width | 1.35mm |
| RoHS | Compliant |
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