PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V Collector-Emitter Breakdown Voltage and a 600mA Continuous Collector Current. Operates with a minimum hFE of 47 and a transition frequency of 200MHz. Packaged in a compact SOT-363 surface mount plastic package, this RoHS compliant component is designed for reliable performance across a -55°C to +150°C temperature range.
PackageSOT-363
Current Rating600mA
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes DRDPB26W-7 technical specifications.
General
| Package/Case | SOT-363 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 600mA |
| Current Rating | 600mA |
| Height | 1mm |
| hFE Min | 47 |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 50V |
| Weight | 0.000212oz |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DRDPB26W-7 Datasheet
Download the complete datasheet for Diodes DRDPB26W-7 to view detailed technical specifications.
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