PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 2A maximum collector current and 20V collector-emitter breakdown voltage (VCEO). Offers a minimum DC current gain (hFE) of 250 and a transition frequency of 100MHz. Packaged in a compact SOT-23 surface-mount plastic package, this RoHS compliant component operates within a temperature range of -55°C to +150°C.
Frequency100MHz
PackageSOT-23
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes DSS20200L-7 technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
20V
Collector Emitter Breakdown Voltage
20V
Collector Emitter Saturation Voltage
-180mV
Collector Emitter Voltage (VCEO)
20V
Collector-emitter Voltage-Max
180mV
Emitter Base Voltage (VEBO)
-7V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
1mm
hFE Min
250
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
20V
Max Collector Current
2A
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
600mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
1.2W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
100MHz
Weight
0.000282oz
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Diodes DSS20200L-7 Datasheet
Download the complete datasheet for Diodes DSS20200L-7 to view detailed technical specifications.
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