PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 15V collector-emitter breakdown voltage, -500mA continuous collector current, and a 340MHz transition frequency. Housed in an ultra-small, leadless DFN1006-3 plastic package with 3 pins, suitable for surface mounting. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 250mW. RoHS and REACH SVHC compliant.
Frequency100MHz
PackageDFN
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes DSS3515M-7B technical specifications.
General
| Package/Case | DFN |
| Collector Base Voltage (VCBO) | -15V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | -500mA |
| Emitter Base Voltage (VEBO) | -6V |
| Gain Bandwidth Product | 340MHz |
| Height | 0.48mm |
| Lead Free | Lead Free |
| Length | 1.07mm |
| Max Breakdown Voltage | 15V |
| Max Collector Current | 500mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 340MHz |
| Width | 0.675mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DSS3515M-7B Datasheet
Download the complete datasheet for Diodes DSS3515M-7B to view detailed technical specifications.
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