PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 15V collector-emitter breakdown voltage, -500mA continuous collector current, and a 340MHz transition frequency. Housed in an ultra-small, leadless DFN1006-3 plastic package with 3 pins, suitable for surface mounting. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 250mW. RoHS and REACH SVHC compliant.
Frequency100MHz
PackageDFN
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes DSS3515M-7B technical specifications.
General
Package/Case
DFN
Collector Base Voltage (VCBO)
-15V
Collector Emitter Breakdown Voltage
15V
Collector Emitter Saturation Voltage
-250mV
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
-500mA
Emitter Base Voltage (VEBO)
-6V
Gain Bandwidth Product
340MHz
Height
0.48mm
Lead Free
Lead Free
Length
1.07mm
Max Breakdown Voltage
15V
Max Collector Current
500mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250mW
Mount
Surface Mount
Package Quantity
10000
Packaging
Tape and Reel
Polarity
PNP
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
340MHz
Width
0.675mm
Compliance
RoHS
Compliant
Datasheet
Diodes DSS3515M-7B Datasheet
Download the complete datasheet for Diodes DSS3515M-7B to view detailed technical specifications.
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