DIODES

DSS4140U-7

Datasheet

NPN BJT Transistor, 40V VCEO, 1A IC, 150MHz fT, SOT-323

Diodes

DSS4140U-7

Name: DSS4140U-7 Diodes
Brand: Diodes
SKU: DSS4140U-7

NPN BJT Transistor, 40V VCEO, 1A IC, 150MHz fT, SOT-323

NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 40V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 1A. Offers a minimum DC current gain (hFE) of 300 and a transition frequency of 150MHz. Housed in an ultra-small, plastic SOT-323 surface mount package, this RoHS compliant component operates from -55°C to 150°C.

PackageSOT-323

MountingSurface Mount

PolarityNPN

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Technical Specifications

Diodes DSS4140U-7 technical specifications.

General

Package/Case	SOT-323
Collector Base Voltage (VCBO)	40V
Collector Emitter Breakdown Voltage	40V
Collector Emitter Saturation Voltage	500mV
Collector Emitter Voltage (VCEO)	40V
Collector-emitter Voltage-Max	500mV
Emitter Base Voltage (VEBO)	5V
Gain Bandwidth Product	150MHz
Height	1mm
hFE Min	300
Lead Free	Lead Free
Length	2.15mm
Max Breakdown Voltage	40V
Max Collector Current	1A
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	400mW
Mount	Surface Mount
Package Quantity	3000
Packaging	Tape and Reel
Polarity	NPN
Radiation Hardening	No
Reach SVHC Compliant	No
RoHS Compliant	Yes
Termination	SMD/SMT
Transition Frequency	150MHz
Weight	0.000212oz
Width	1.3mm