NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 40V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 1A. Offers a minimum DC current gain (hFE) of 300 and a transition frequency of 150MHz. Housed in an ultra-small, plastic SOT-323 surface mount package, this RoHS compliant component operates from -55°C to 150°C.
PackageSOT-323
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes DSS4140U-7 technical specifications.
General
Package/Case
SOT-323
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
500mV
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
150MHz
Height
1mm
hFE Min
300
Lead Free
Lead Free
Length
2.15mm
Max Breakdown Voltage
40V
Max Collector Current
1A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
400mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
150MHz
Weight
0.000212oz
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Diodes DSS4140U-7 Datasheet
Download the complete datasheet for Diodes DSS4140U-7 to view detailed technical specifications.
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