DIODES

DSS4140V-7

Datasheet

NPN BJT Transistor, 40V VCEO, 1A IC, 150MHz, SOT-563

Diodes

DSS4140V-7

Name: DSS4140V-7 Diodes
Brand: Diodes
SKU: DSS4140V-7

NPN BJT Transistor, 40V VCEO, 1A IC, 150MHz, SOT-563

NPN silicon bipolar junction transistor for small signal applications. Features a 40V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 1A. Offers a minimum DC current gain (hFE) of 300 and a transition frequency of 150MHz. Packaged in an ultra-small, 6-lead plastic SOT-563 surface-mount package. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 600mW. RoHS compliant and lead-free.

PackageSOT-563

MountingSurface Mount

PolarityNPN

Power600mW

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Technical Specifications

Diodes DSS4140V-7 technical specifications.

General

Package/Case	SOT-563
Collector Base Voltage (VCBO)	40V
Collector Emitter Breakdown Voltage	40V
Collector Emitter Voltage (VCEO)	40V
Collector-emitter Voltage-Max	440mV
Emitter Base Voltage (VEBO)	5V
Gain Bandwidth Product	150MHz
Height	0.6mm
hFE Min	300
Lead Free	Lead Free
Length	1.6mm
Max Breakdown Voltage	40V
Max Collector Current	1A
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	600mW
Mount	Surface Mount
Package Quantity	3000
Packaging	Tape and Reel
Polarity	NPN
Power Dissipation	600mW
Radiation Hardening	No
Reach SVHC Compliant	No
RoHS Compliant	Yes
Termination	SMD/SMT
Transition Frequency	150MHz
Weight	0.000106oz
Width	1.2mm