NPN silicon bipolar junction transistor for small signal applications. Features a 40V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 1A. Offers a minimum DC current gain (hFE) of 300 and a transition frequency of 150MHz. Packaged in an ultra-small, 6-lead plastic SOT-563 surface-mount package. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 600mW. RoHS compliant and lead-free.
PackageSOT-563
MountingSurface Mount
PolarityNPN
Power600mW
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Technical Specifications
Diodes DSS4140V-7 technical specifications.
General
Package/Case
SOT-563
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
440mV
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
150MHz
Height
0.6mm
hFE Min
300
Lead Free
Lead Free
Length
1.6mm
Max Breakdown Voltage
40V
Max Collector Current
1A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
600mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
600mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
150MHz
Weight
0.000106oz
Width
1.2mm
Compliance
RoHS
Compliant
Datasheet
Diodes DSS4140V-7 Datasheet
Download the complete datasheet for Diodes DSS4140V-7 to view detailed technical specifications.
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