NPN bipolar junction transistor for small signal applications. Features a 60V collector-emitter breakdown voltage and 1A maximum collector current. Offers a minimum DC current gain (hFE) of 250 and a transition frequency of 150MHz. Packaged in an ultra-small, 3-pin plastic SOT-323 surface-mount package. Operates across a wide temperature range from -55°C to 150°C.
PackageSOT-323
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes DSS4160U-7 technical specifications.
General
Package/Case
SOT-323
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
280mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
280mV
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
150MHz
Height
1mm
hFE Min
250
Lead Free
Lead Free
Length
2.15mm
Max Breakdown Voltage
60V
Max Collector Current
1A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
400mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
150MHz
Weight
0.000212oz
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Diodes DSS4160U-7 Datasheet
Download the complete datasheet for Diodes DSS4160U-7 to view detailed technical specifications.
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