NPN Bipolar Junction Transistor (BJT) for small signal applications. Features a 2A maximum collector current and 20V collector-emitter breakdown voltage. Operates with a 260MHz gain bandwidth product and 220 minimum hFE. Housed in an ultra-small, 6-lead SOT-563 plastic package for surface mounting. Rated for operation from -55°C to 150°C with 600mW power dissipation. RoHS compliant and lead-free.
PackageSOT-563
MountingSurface Mount
PolarityNPN
Power600mW
Quick Jump:
Technical Specifications
Diodes DSS4220V-7 technical specifications.
General
Package/Case
SOT-563
Collector Base Voltage (VCBO)
20V
Collector Emitter Breakdown Voltage
20V
Collector Emitter Voltage (VCEO)
20V
Collector-emitter Voltage-Max
350mV
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
260MHz
Height
0.6mm
hFE Min
220
Lead Free
Lead Free
Length
1.6mm
Max Breakdown Voltage
20V
Max Collector Current
2A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
600mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
600mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
260MHz
Weight
0.000106oz
Width
1.2mm
Compliance
RoHS
Compliant
Datasheet
Diodes DSS4220V-7 Datasheet
Download the complete datasheet for Diodes DSS4220V-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
