NPN bipolar junction transistor (BJT) for small signal applications. Features a 40V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 2A. Offers a minimum DC current gain (hFE) of 350 and a transition frequency of 100MHz. Packaged in a 3-pin SOT-23 surface-mount plastic package. Operates within a temperature range of -55°C to 150°C.
Frequency100MHz
PackageSOT-23
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes DSS4240T-7 technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
320mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
320mV
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
1mm
hFE Min
350
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
40V
Max Collector Current
2A
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
600mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
600mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
100MHz
Weight
0.000282oz
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Diodes DSS4240T-7 Datasheet
Download the complete datasheet for Diodes DSS4240T-7 to view detailed technical specifications.
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