NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a maximum collector current of 2A and a collector-emitter breakdown voltage of 20V. Offers a minimum DC current gain (hFE) of 220 and a transition frequency of 100MHz. Packaged in a compact SOT-23 plastic surface-mount case, this component is RoHS compliant and operates within a temperature range of -55°C to 150°C.
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Diodes DSS4320T-7 technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 310mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 310mV |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| Height | 1mm |
| hFE Min | 220 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 100MHz |
| Weight | 0.000282oz |
| Width | 1.3mm |
| RoHS | Compliant |
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