NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a maximum collector current of 2A and a collector-emitter breakdown voltage of 20V. Offers a minimum DC current gain (hFE) of 220 and a transition frequency of 100MHz. Packaged in a compact SOT-23 plastic surface-mount case, this component is RoHS compliant and operates within a temperature range of -55°C to 150°C.
PackageSOT-23
MountingSurface Mount
PolarityNPN
Quick Jump:
Technical Specifications
Diodes DSS4320T-7 technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
20V
Collector Emitter Breakdown Voltage
20V
Collector Emitter Saturation Voltage
310mV
Collector Emitter Voltage (VCEO)
20V
Collector-emitter Voltage-Max
310mV
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
100MHz
Height
1mm
hFE Min
220
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
20V
Max Collector Current
2A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
600mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
100MHz
Weight
0.000282oz
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Diodes DSS4320T-7 Datasheet
Download the complete datasheet for Diodes DSS4320T-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.