NPN bipolar junction transistor featuring a 4A maximum collector current and 40V collector-emitter breakdown voltage. This silicon transistor offers a minimum DC current gain (hFE) of 300 and a transition frequency of 70MHz. Packaged in a SOT-89 surface-mount plastic package, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2W.
Frequency70MHz
PackageSOT-89
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes DSS4540X-13 technical specifications.
General
Package/Case
SOT-89
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
355mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
355mV
Emitter Base Voltage (VEBO)
6V
Gain Bandwidth Product
70MHz
Height
1.6mm
hFE Min
300
Lead Free
Lead Free
Length
4.6mm
Max Breakdown Voltage
40V
Max Collector Current
4A
Max Frequency
70MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Package Quantity
2500
Packaging
Tape and Reel
Polarity
NPN
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
70MHz
Weight
0.001834oz
Width
2.6mm
Compliance
RoHS
Compliant
Datasheet
Diodes DSS4540X-13 Datasheet
Download the complete datasheet for Diodes DSS4540X-13 to view detailed technical specifications.
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