PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 60V collector-emitter breakdown voltage and 1A maximum collector current. Operates with a -340mV collector-emitter saturation voltage and a 150MHz gain bandwidth product. Packaged in a 3-lead SOT-23 surface mount plastic package, this component is RoHS and REACH SVHC compliant, designed for operation between -55°C and 150°C.
PackageSOT-23
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes DSS5160T-7 technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
-80V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
-340mV
Collector-emitter Voltage-Max
340mV
Emitter Base Voltage (VEBO)
-5V
Gain Bandwidth Product
150MHz
Height
1.1mm
Lead Free
Lead Free
Length
3mm
Max Breakdown Voltage
60V
Max Collector Current
1A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
725mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
150MHz
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes DSS5160T-7 Datasheet
Download the complete datasheet for Diodes DSS5160T-7 to view detailed technical specifications.
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