PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 60V collector-emitter breakdown voltage and 1A maximum collector current. Operates with a -340mV collector-emitter saturation voltage and a 150MHz gain bandwidth product. Packaged in a 3-lead SOT-23 surface mount plastic package, this component is RoHS and REACH SVHC compliant, designed for operation between -55°C and 150°C.
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Diodes DSS5160T-7 technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -340mV |
| Collector-emitter Voltage-Max | 340mV |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 150MHz |
| Height | 1.1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 725mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Compliant |
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