PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 60V Collector-Emitter Breakdown Voltage (V(BR)CEO) and a maximum Collector Current (I(C)) of 1A. Offers a minimum DC current gain (hFE) of 100 and a transition frequency (fT) of 150MHz. Housed in an ultra-small, 6-lead plastic SOT-563 package for surface mounting. Operates across a wide temperature range from -55°C to +150°C with a maximum power dissipation of 600mW.
Frequency150MHz
PackageSOT-563
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes DSS5160V-7 technical specifications.
General
Package/Case
SOT-563
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
330mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
330mV
Emitter Base Voltage (VEBO)
5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
0.6mm
hFE Min
100
Lead Free
Lead Free
Length
1.6mm
Max Breakdown Voltage
60V
Max Collector Current
1A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
600mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
600mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
150MHz
Weight
0.000106oz
Width
1.2mm
Compliance
RoHS
Compliant
Datasheet
Diodes DSS5160V-7 Datasheet
Download the complete datasheet for Diodes DSS5160V-7 to view detailed technical specifications.
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