PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector current of 2A and a collector-emitter breakdown voltage of 40V. Offers a minimum DC current gain (hFE) of 300 and a transition frequency of 100MHz. Packaged in a compact SOT-23 surface-mount plastic package, this RoHS compliant component operates across a wide temperature range from -55°C to 150°C.
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Diodes DSS5240T-7 technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | -40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -350mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 350mV |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 100MHz |
| Height | 1mm |
| hFE Min | 300 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 2A |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 100MHz |
| Weight | 0.000282oz |
| Width | 1.3mm |
| RoHS | Compliant |
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