PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector current of 2A and a collector-emitter breakdown voltage of 40V. Offers a minimum DC current gain (hFE) of 300 and a transition frequency of 100MHz. Packaged in a compact SOT-23 surface-mount plastic package, this RoHS compliant component operates across a wide temperature range from -55°C to 150°C.
Frequency100MHz
PackageSOT-23
MountingSurface Mount
PolarityPNP
Quick Jump:
Technical Specifications
Diodes DSS5240T-7 technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
-40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
-350mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
350mV
Emitter Base Voltage (VEBO)
-5V
Gain Bandwidth Product
100MHz
Height
1mm
hFE Min
300
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
40V
Max Collector Current
2A
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
600mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
100MHz
Weight
0.000282oz
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Diodes DSS5240T-7 Datasheet
Download the complete datasheet for Diodes DSS5240T-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
