PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 40V Collector-Emitter Breakdown Voltage (VCEO) and a maximum collector current of 1.8A. Offers a minimum DC current gain (hFE) of 300 and a transition frequency of 150MHz. Housed in an ultra-small, 6-lead plastic SOT-563 package for surface mounting. Operates across a wide temperature range from -55°C to +150°C. RoHS compliant and lead-free.
PackageSOT-563
MountingSurface Mount
PolarityPNP
Quick Jump:
Technical Specifications
Diodes DSS5240V-7 technical specifications.
General
Package/Case
SOT-563
Collector Base Voltage (VCBO)
-40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
-530mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
530mV
Emitter Base Voltage (VEBO)
-5V
Gain Bandwidth Product
150MHz
Height
0.6mm
hFE Min
300
Lead Free
Lead Free
Length
1.6mm
Max Breakdown Voltage
40V
Max Collector Current
1.8A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
600mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
150MHz
Weight
0.000106oz
Width
1.2mm
Compliance
RoHS
Compliant
Datasheet
Diodes DSS5240V-7 Datasheet
Download the complete datasheet for Diodes DSS5240V-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
