PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 6A continuous collector current (I(C)) and 60V collector-emitter breakdown voltage (V(BR)CEO). Offers a 100MHz transition frequency and a minimum hFE of 120. Packaged in a 4-pin SOT-223 plastic housing, this component operates within a temperature range of -55°C to 150°C and is RoHS compliant.
Frequency100MHz
PackageSOT-223
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes DSS60600MZ4-13 technical specifications.
General
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 350mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 350mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 1.6mm |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Length | 6.5mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 6A |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.2W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 100MHz |
| Weight | 0.000282oz |
| Width | 3.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DSS60600MZ4-13 Datasheet
Download the complete datasheet for Diodes DSS60600MZ4-13 to view detailed technical specifications.
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