
NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 40V collector-emitter breakdown voltage and 200mA continuous collector current. Operates with a 300mV collector-emitter saturation voltage and a 300MHz transition frequency. Packaged in a compact SOT-963 surface-mount plastic case, this lead-free and RoHS-compliant component is supplied on tape and reel.
Diodes DST3904DJ-7 technical specifications.
| Package/Case | SOT-963 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 200mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 300MHz |
| Height | 0.45mm |
| Lead Free | Lead Free |
| Length | 1.05mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| Width | 0.85mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DST3904DJ-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.