PNP Silicon Bipolar Junction Transistor, surface mount, featuring a 45V Collector-Emitter Breakdown Voltage and 100mA Continuous Collector Current. This 2-element transistor operates within a -55°C to 150°C temperature range, with a 300mW power dissipation. It boasts a 340MHz Gain Bandwidth Product and is supplied in a SOT-963 plastic package on tape and reel.
PackageSOT-963
MountingSurface Mount
PolarityPNP
Power300mW
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Technical Specifications
Diodes DST857BDJ-7 technical specifications.
General
| Package/Case | SOT-963 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | -100mA |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 340MHz |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 340MHz |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DST857BDJ-7 Datasheet
Download the complete datasheet for Diodes DST857BDJ-7 to view detailed technical specifications.
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