NPN Bipolar Junction Transistor (BJT) for small signal applications. Features a 1A maximum collector current and an 18V collector-emitter breakdown voltage. Operates with a 100MHz transition frequency and a minimum hFE of 150. Housed in a compact SOT-363 plastic package, this surface-mount device is RoHS compliant and lead-free, with a maximum power dissipation of 200mW.
Frequency100MHz
PackageSOT-363
Current Rating1A
MountingSurface Mount
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Technical Specifications
Diodes DVR1V8W-7 technical specifications.
General
Package/Case
SOT-363
Collector Base Voltage (VCBO)
45V
Collector Emitter Breakdown Voltage
18V
Collector Emitter Voltage (VCEO)
18V
Collector-emitter Voltage-Max
500mV
Current Rating
1A
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
1mm
hFE Min
150
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
18V
Max Collector Current
1A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
200mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
18V
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes DVR1V8W-7 Datasheet
Download the complete datasheet for Diodes DVR1V8W-7 to view detailed technical specifications.
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