NPN Bipolar Junction Transistor (BJT) for small signal applications. Features a 1A maximum collector current and an 18V collector-emitter breakdown voltage. Operates with a 100MHz transition frequency and a minimum hFE of 150. Housed in a compact SOT-363 plastic package, this surface-mount device is RoHS compliant and lead-free, with a maximum power dissipation of 200mW.
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Diodes DVR1V8W-7 technical specifications.
| Package/Case | SOT-363 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 18V |
| Collector Emitter Voltage (VCEO) | 18V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 1mm |
| hFE Min | 150 |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 18V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 18V |
| Weight | 0.000212oz |
| Width | 1.35mm |
| RoHS | Compliant |
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