NPN silicon bipolar junction transistor for small signal applications. Features a maximum collector current of 1A and a collector-emitter breakdown voltage of 18V. Operates with a transition frequency of 100MHz and a maximum power dissipation of 200mW. Packaged in a 6-lead SOT-363 surface-mount plastic package, this RoHS compliant component is supplied on tape and reel.
PackageSOT-363
Current Rating1A
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes DVR5V0W-7 technical specifications.
General
Package/Case
SOT-363
Collector Base Voltage (VCBO)
45V
Collector Emitter Breakdown Voltage
18V
Collector Emitter Saturation Voltage
500mV
Collector-emitter Voltage-Max
500mV
Current Rating
1A
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
100MHz
Height
1mm
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
18V
Max Collector Current
1A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
18V
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes DVR5V0W-7 Datasheet
Download the complete datasheet for Diodes DVR5V0W-7 to view detailed technical specifications.
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