NPN silicon bipolar junction transistor for small signal applications. Features a maximum collector current of 1A and a collector-emitter breakdown voltage of 18V. Operates with a transition frequency of 100MHz and a maximum power dissipation of 200mW. Packaged in a 6-lead SOT-363 surface-mount plastic package, this RoHS compliant component is supplied on tape and reel.
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Diodes DVR5V0W-7 technical specifications.
| Package/Case | SOT-363 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 18V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 18V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 18V |
| Weight | 0.000212oz |
| Width | 1.35mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DVR5V0W-7 to view detailed technical specifications.
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