
The DVRN6056-7-F is a bipolar junction transistor with a collector-emitter breakdown voltage of 40V and a maximum collector current of 600mA. It is packaged in a SOT-23-6 plastic package and is designed for surface mount applications. The transistor operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 300mW. The DVRN6056-7-F is compliant with RoHS and Reach SVHC regulations.
Diodes DVRN6056-7-F technical specifications.
| Package/Case | SOT-23-6 |
| Collector Emitter Breakdown Voltage | 40V |
| Collector-emitter Voltage-Max | 750mV |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| RoHS | Compliant |
Download the complete datasheet for Diodes DVRN6056-7-F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.