NPN bipolar junction transistor (BJT) for small signal applications, featuring a 6A continuous collector current and 60V collector-emitter breakdown voltage. This silicon transistor offers a 130MHz gain bandwidth product and a maximum power dissipation of 3.2W. It is housed in a TO-252 package with a 3-pin configuration, designed for surface mounting. Operating temperature range is -55°C to 150°C.
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Diodes DXT2010P5-13 technical specifications.
| Collector Base Voltage (VCBO) | 150V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 260mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 260mV |
| Continuous Collector Current | 6A |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 130MHz |
| Height | 1.15mm |
| Lead Free | Lead Free |
| Length | 4.05mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 6A |
| Max Frequency | 130MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.2W |
| Mount | Surface Mount |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 130MHz |
| Weight | 0.003386oz |
| Width | 5.45mm |
| RoHS | Compliant |
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