NPN bipolar junction transistor for surface mount applications. Features a 100V collector-emitter breakdown voltage and a 6A continuous collector current. Operates with a 130MHz transition frequency and a 220mV collector-emitter saturation voltage. Housed in a TO-252 plastic package, this silicon transistor supports a maximum power dissipation of 3.2W.
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Diodes DXT2011P5-13 technical specifications.
| Collector Base Voltage (VCBO) | 200V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 220mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 220mV |
| Continuous Collector Current | 6A |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 130MHz |
| Gain Bandwidth Product | 130MHz |
| Height | 1.15mm |
| Length | 4.05mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 6A |
| Max Frequency | 130MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.2W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 3.2W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 130MHz |
| Weight | 0.003386oz |
| Width | 5.45mm |
| RoHS | Compliant |
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