The DXT2012P5-13 is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 60V and a maximum collector current of 5.5A. It has a maximum power dissipation of 3.2W and is suitable for surface mount applications. The transistor operates within a temperature range of -55°C to 150°C and is compliant with RoHS and Reach SVHC regulations.
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes DXT2012P5-13 technical specifications.
General
| Collector Base Voltage (VCBO) | -100V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | -5.5A |
| Emitter Base Voltage (VEBO) | -7V |
| Gain Bandwidth Product | 120MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 20nA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 120MHz |
| Weight | 0.003386oz |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DXT2012P5-13 Datasheet
Download the complete datasheet for Diodes DXT2012P5-13 to view detailed technical specifications.
No datasheet is available for this part.