PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 100V Collector Emitter Breakdown Voltage (VCEO) and a 5A Continuous Collector Current (IC). Offers a 140V Collector Base Voltage (VCBO) and a -7V Emitter Base Voltage (VEBO). Operates with a transition frequency of 125MHz and a maximum power dissipation of 3.2W. Packaged in a TO-252 (POWERDI 5) surface mount plastic package, suitable for tape and reel deployment.
Frequency125MHz
MountingSurface Mount
PolarityPNP
Power3.2W
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Technical Specifications
Diodes DXT2013P5-13 technical specifications.
General
| Collector Base Voltage (VCBO) | 140V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | -340mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 340mV |
| Continuous Collector Current | -5A |
| Emitter Base Voltage (VEBO) | -7V |
| Frequency | 125MHz |
| Gain Bandwidth Product | 125MHz |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.2W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 3.2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 125MHz |
| Weight | 0.003386oz |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DXT2013P5-13 Datasheet
Download the complete datasheet for Diodes DXT2013P5-13 to view detailed technical specifications.
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