PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 100V Collector Emitter Breakdown Voltage (VCEO) and a 5A Continuous Collector Current (IC). Offers a 140V Collector Base Voltage (VCBO) and a -7V Emitter Base Voltage (VEBO). Operates with a transition frequency of 125MHz and a maximum power dissipation of 3.2W. Packaged in a TO-252 (POWERDI 5) surface mount plastic package, suitable for tape and reel deployment.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Diodes DXT2013P5-13 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Diodes DXT2013P5-13 technical specifications.
| Collector Base Voltage (VCBO) | 140V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | -340mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 340mV |
| Continuous Collector Current | -5A |
| Emitter Base Voltage (VEBO) | -7V |
| Frequency | 125MHz |
| Gain Bandwidth Product | 125MHz |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.2W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 3.2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 125MHz |
| Weight | 0.003386oz |
| RoHS | Compliant |
Download the complete datasheet for Diodes DXT2013P5-13 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
