NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 25V collector-emitter breakdown voltage (VCEO) and 50V collector-base voltage (VCBO). Offers a maximum collector current of 5A and a transition frequency of 220MHz. Packaged in a SOT-89 surface-mount plastic case with 4 pins. Operates within a temperature range of -55°C to +150°C with 1W power dissipation.
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Diodes DXT3150-13 technical specifications.
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 220MHz |
| Gain Bandwidth Product | 220MHz |
| Height | 1.5mm |
| Length | 4.5mm |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 220MHz |
| Weight | 0.001834oz |
| Width | 2.48mm |
| RoHS | Compliant |
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