PNP bipolar junction transistor for general-purpose applications. Features a 40V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 200mA. Operates with a transition frequency of 250MHz and a maximum power dissipation of 1W. Packaged in a SOT-89 surface-mount plastic case, this silicon transistor is lead-free and RoHS compliant.
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Diodes DXT3906-13 technical specifications.
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -400mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 400mV |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 250MHz |
| Height | 1.5mm |
| Lead Free | Lead Free |
| Length | 4.5mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| Type | General Purpose |
| Weight | 0.001834oz |
| Width | 2.48mm |
| RoHS | Compliant |
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