PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 150V Collector-Emitter Breakdown Voltage (VCEO) and 600mA maximum collector current. Operates with a 300MHz gain bandwidth product and 1W power dissipation in a surface-mount SOT-89 package. Compliant with RoHS and REACH SVHC standards.
Frequency300MHz
PackageSOT-89
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes DXT5401-13 technical specifications.
General
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 160V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 150V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| Height | 1.6mm |
| Length | 4.6mm |
| Max Breakdown Voltage | 150V |
| Max Collector Current | 600mA |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Weight | 0.001834oz |
| Width | 2.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DXT5401-13 Datasheet
Download the complete datasheet for Diodes DXT5401-13 to view detailed technical specifications.
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