The DXTN07100BP5-13 is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 100V and a maximum collector current of 2A. It has a gain bandwidth product of 175MHz and a maximum power dissipation of 3.2W. The transistor is packaged in a surface mount package and is compliant with RoHS regulations. It operates over a temperature range of -55°C to 150°C and is available in quantities of 5000 per reel.
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Diodes DXTN07100BP5-13 technical specifications.
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 175MHz |
| hFE Min | 100 |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.2W |
| Mount | Surface Mount |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerDI® 5 |
| Transition Frequency | 175MHz |
| Weight | 0.003386oz |
| RoHS | Compliant |
Download the complete datasheet for Diodes DXTN07100BP5-13 to view detailed technical specifications.
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