
NPN silicon bipolar junction transistor (BJT) for general-purpose switching and amplification. Features a 40V collector-emitter breakdown voltage (VCEO) and a continuous collector current of up to 600mA. Operates with a maximum power dissipation of 1W and a transition frequency of 300MHz. Packaged in a SOT-223 surface-mount plastic package, this component is RoHS and REACH SVHC compliant.
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Diodes DZT2222A-13 technical specifications.
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 75V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 1V |
| Continuous Collector Current | 600mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| Height | 1.6mm |
| hFE Min | 35 |
| Length | 6.5mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 600mA |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| Weight | 0.000282oz |
| Width | 3.5mm |
| RoHS | Compliant |
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