PNP Silicon Bipolar Junction Transistor (BJT) for general-purpose applications. Features a 60V Collector-Emitter Breakdown Voltage (VCEO) and 600mA Continuous Collector Current (IC). Operates with a 200MHz transition frequency and offers a minimum hFE of 50. Packaged in a SOT-223 surface-mount plastic package, this component is RoHS and REACH SVHC compliant, operating from -55°C to 150°C.
Frequency200MHz
PackageSOT-223
MountingSurface Mount
PolarityPNP
Quick Jump:
Technical Specifications
Diodes DZT2907A-13 technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
-1.6V
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
1.6V
Continuous Collector Current
-600mA
Emitter Base Voltage (VEBO)
-5V
Frequency
200MHz
Gain Bandwidth Product
200MHz
Height
1.6mm
hFE Min
50
Lead Free
Lead Free
Length
6.5mm
Max Breakdown Voltage
60V
Max Collector Current
600mA
Max Frequency
200MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.5W
Mount
Surface Mount
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
1.5W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
200MHz
Type
General Purpose
Weight
0.000282oz
Width
3.5mm
Compliance
RoHS
Compliant
Datasheet
Diodes DZT2907A-13 Datasheet
Download the complete datasheet for Diodes DZT2907A-13 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
