The DZT751-13 is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 60V and a maximum collector current of 3A. It has a maximum power dissipation of 2W and is packaged in a surface mount SOT-223 package. The transistor has a gain bandwidth product of 145MHz and operates over a temperature range of -55°C to 150°C. It is RoHS compliant and available in quantities of 2500 units per reel.
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Diodes DZT751-13 technical specifications.
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -600mV |
| Collector-emitter Voltage-Max | 600mV |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 145MHz |
| Height | 1.6mm |
| Length | 6.5mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 145MHz |
| Weight | 0.000282oz |
| Width | 3.5mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DZT751-13 to view detailed technical specifications.
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