NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 6A continuous collector current and 60V collector-emitter breakdown voltage. Operates with a 130MHz transition frequency and offers a minimum hFE of 25. Housed in a SOT-223 plastic package for surface mounting. Rated for a maximum power dissipation of 1W and operates across a temperature range of -55°C to 150°C.
Frequency130MHz
PackageSOT-223
MountingSurface Mount
PolarityNPN
Quick Jump:
Technical Specifications
Diodes DZT851-13 technical specifications.
General
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 150V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 375mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 375mV |
| Continuous Collector Current | 6A |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 130MHz |
| Gain Bandwidth Product | 130MHz |
| Height | 1.65mm |
| hFE Min | 25 |
| Length | 6.7mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 6A |
| Max Frequency | 130MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 3W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 130MHz |
| Weight | 0.000282oz |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DZT851-13 Datasheet
Download the complete datasheet for Diodes DZT851-13 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
