DIODES

DZT853-13

Datasheet

NPN BJT Transistor, 6A I(C), 100V V(BR)CEO, SOT-223

Diodes

DZT853-13

Name: DZT853-13 Diodes
Brand: Diodes
SKU: DZT853-13

NPN BJT Transistor, 6A I(C), 100V V(BR)CEO, SOT-223

NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 6A continuous collector current and 100V collector-emitter breakdown voltage. Operates with a transition frequency of 130MHz and a minimum hFE of 100. Packaged in a SOT-223 plastic case, this silicon transistor offers a maximum power dissipation of 1W and is RoHS compliant.

Frequency130MHz

PackageSOT-223

MountingSurface Mount

PolarityNPN

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Technical Specifications

Diodes DZT853-13 technical specifications.

General

Package/Case	SOT-223
Collector Base Voltage (VCBO)	200V
Collector Emitter Breakdown Voltage	100V
Collector Emitter Saturation Voltage	340mV
Collector Emitter Voltage (VCEO)	100V
Collector-emitter Voltage-Max	340mV
Continuous Collector Current	6A
Emitter Base Voltage (VEBO)	6V
Frequency	130MHz
Gain Bandwidth Product	130MHz
Height	1.65mm
hFE Min	100
Lead Free	Lead Free
Length	6.7mm
Max Breakdown Voltage	100V
Max Collector Current	6A
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1W
Mount	Surface Mount
Number of Elements	1
Package Quantity	2500
Packaging	Tape and Reel
Polarity	NPN
Power Dissipation	3W
Radiation Hardening	No
RoHS Compliant	Yes
Transition Frequency	130MHz
Weight	0.000282oz
Width	3.7mm