PNP Silicon Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a 140V Collector-Emitter Breakdown Voltage (VCEO) and a maximum Collector Current (IC) of 4A. Operates with a 150MHz transition frequency and a 1W power dissipation. Packaged in a SOT-223 surface-mount plastic package, this RoHS-compliant component is supplied on tape and reel.
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Diodes DZT955-13 technical specifications.
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 180V |
| Collector Emitter Breakdown Voltage | 140V |
| Collector Emitter Voltage (VCEO) | 140V |
| Collector-emitter Voltage-Max | 370mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| Height | 1.6mm |
| Length | 6.5mm |
| Max Breakdown Voltage | 140V |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| Weight | 0.000282oz |
| Width | 3.5mm |
| RoHS | Compliant |
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