DIODES

FCX1047ATA

Datasheet

NPN BJT Transistor, 4A I(C), 10V V(CE), 150MHz, SOT-89, SM

Diodes

FCX1047ATA

Name: FCX1047ATA Diodes
Brand: Diodes
SKU: FCX1047ATA

NPN BJT Transistor, 4A I(C), 10V V(CE), 150MHz, SOT-89, SM

NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a continuous collector current of 4A and a collector emitter breakdown voltage of 10V. Offers a maximum power dissipation of 2W and a transition frequency of 150MHz. Packaged in a SOT-89 surface mount case, this component is RoHS compliant and operates within a temperature range of -55°C to 150°C.

Frequency150MHz

PackageSOT-89

Current Rating4A

MountingSurface Mount

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Technical Specifications

Diodes FCX1047ATA technical specifications.

General

Package/Case	SOT-89
Collector Base Voltage (VCBO)	35V
Collector Emitter Breakdown Voltage	10V
Collector Emitter Saturation Voltage	350mV
Collector Emitter Voltage (VCEO)	10V
Collector-emitter Voltage-Max	350mV
Continuous Collector Current	4A
Current Rating	4A
Emitter Base Voltage (VEBO)	7V
Gain Bandwidth Product	150MHz
Height	1.6mm
Lead Free	Lead Free
Length	4.6mm
Max Breakdown Voltage	10V
Max Collector Current	4A
Max Frequency	150MHz
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2W
Mount	Surface Mount
Package Quantity	1000
Packaging	Tape and Reel
Polarity	NPN
Radiation Hardening	No
Reach SVHC Compliant	No
RoHS Compliant	Yes
Transition Frequency	150MHz
DC Rated Voltage	10V
Weight	0.001834oz
Width	2.6mm