PNP Silicon Bipolar Junction Transistor (BJT) in a SOT-89 package for surface mounting. Features a continuous collector current of -3A and a collector-emitter breakdown voltage of 25V. Offers a gain bandwidth product of 135MHz and a maximum power dissipation of 2W. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
Frequency135MHz
PackageSOT-89
Current Rating-3A
MountingSurface Mount
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Technical Specifications
Diodes FCX1149ATA technical specifications.
General
Package/Case
SOT-89
Collector Base Voltage (VCBO)
30V
Collector Emitter Breakdown Voltage
25V
Collector Emitter Saturation Voltage
-230mV
Collector Emitter Voltage (VCEO)
25V
Collector-emitter Voltage-Max
350mV
Continuous Collector Current
-3A
Current Rating
-3A
Emitter Base Voltage (VEBO)
-5V
Frequency
135MHz
Gain Bandwidth Product
135MHz
Height
1.6mm
Lead Free
Lead Free
Length
4.6mm
Max Breakdown Voltage
25V
Max Collector Current
3A
Max Frequency
135MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
2W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
135MHz
DC Rated Voltage
-25V
Weight
0.001834oz
Width
2.6mm
Compliance
RoHS
Compliant
Datasheet
Diodes FCX1149ATA Datasheet
Download the complete datasheet for Diodes FCX1149ATA to view detailed technical specifications.
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