NPN silicon bipolar junction transistor for small signal applications. Features a 150V collector-emitter breakdown voltage (VCEO) and 1A continuous collector current (IC). Operates with a 100MHz transition frequency and offers a maximum power dissipation of 1W. Packaged in a SOT-89 surface mount case, this RoHS compliant component is designed for a wide operating temperature range from -65°C to 150°C.
Frequency100MHz
PackageSOT-89
Current Rating100mA
MountingSurface Mount
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Technical Specifications
Diodes FCX495TA technical specifications.
General
Package/Case
SOT-89
Collector Base Voltage (VCBO)
170V
Collector Emitter Breakdown Voltage
150V
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
150V
Collector-emitter Voltage-Max
300mV
Continuous Collector Current
1A
Current Rating
100mA
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
1.5mm
Lead Free
Lead Free
Length
4.5mm
Max Breakdown Voltage
150V
Max Collector Current
1A
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
150V
Weight
0.001834oz
Width
2.5mm
Compliance
RoHS
Compliant
Datasheet
Diodes FCX495TA Datasheet
Download the complete datasheet for Diodes FCX495TA to view detailed technical specifications.
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