PNP Silicon Bipolar Junction Transistor for small signal applications. Features a 30V Collector-Emitter Breakdown Voltage (VCEO) and a 1A Continuous Collector Current. Operates with a -5V Emitter-Base Voltage (VEBO) and a 100MHz Transition Frequency. Packaged in a SOT-89 surface mount case, this RoHS compliant component offers 1W maximum power dissipation and a 150°C maximum operating temperature.
Frequency100MHz
PackageSOT-89
Current Rating-1A
MountingSurface Mount
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Technical Specifications
Diodes FCX589TA technical specifications.
General
Package/Case
SOT-89
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
-650mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
650mV
Continuous Collector Current
-1A
Current Rating
-1A
Emitter Base Voltage (VEBO)
-5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
1.5mm
Lead Free
Lead Free
Length
4.5mm
Max Breakdown Voltage
30V
Max Collector Current
1A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
-30V
Weight
0.001834oz
Width
2.5mm
Compliance
RoHS
Compliant
Datasheet
Diodes FCX589TA Datasheet
Download the complete datasheet for Diodes FCX589TA to view detailed technical specifications.
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