PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 200V Collector Emitter Breakdown Voltage (VCEO) and a 300mA Continuous Collector Current. Operates with a 150MHz Gain Bandwidth Product and a maximum power dissipation of 1W. Packaged in a SOT-89 surface mount case, this lead-free component offers a wide operating temperature range from -65°C to 150°C.
Frequency150MHz
PackageSOT-89
Current Rating-300mA
MountingSurface Mount
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Technical Specifications
Diodes FCX596TA technical specifications.
General
Package/Case
SOT-89
Collector Base Voltage (VCBO)
220V
Collector Emitter Breakdown Voltage
200V
Collector Emitter Saturation Voltage
-350mV
Collector Emitter Voltage (VCEO)
200V
Collector-emitter Voltage-Max
350mV
Continuous Collector Current
-300mA
Current Rating
-300mA
Emitter Base Voltage (VEBO)
-5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
1.5mm
Lead Free
Lead Free
Length
4.5mm
Max Breakdown Voltage
200V
Max Collector Current
300mA
Max Frequency
150MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
150MHz
DC Rated Voltage
-200V
Weight
0.001834oz
Width
2.5mm
Compliance
RoHS
Compliant
Datasheet
Diodes FCX596TA Datasheet
Download the complete datasheet for Diodes FCX596TA to view detailed technical specifications.
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