
NPN silicon bipolar junction transistor in SOT-89 package, featuring a 3A continuous collector current and 15V collector-emitter breakdown voltage. This surface-mount device offers a 120MHz gain bandwidth product and a maximum power dissipation of 2W. Operating temperature range is -55°C to 150°C, with a 4A current rating. RoHS compliant and lead-free.
Diodes FCX617TA technical specifications.
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