NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 40V collector-emitter breakdown voltage (V(BR)CEO) and a maximum collector current of 200mA. Offers a transition frequency of 300MHz and a maximum power dissipation of 330mW. Surface mountable in a TO-236-3 package, operating from -55°C to 150°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Diodes FMMT3904TA datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Diodes FMMT3904TA technical specifications.
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 300MHz |
| Height | 1mm |
| Lead Free | Contains Lead |
| Length | 3.05mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 40V |
| Weight | 0.00709oz |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes FMMT3904TA to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
