NPN silicon bipolar junction transistor for small signal applications. Features a 100V collector-emitter breakdown voltage and 500mA continuous collector current. Operates with a 260V collector-base voltage and 6V emitter-base voltage. Offers a transition frequency of 40MHz and a maximum power dissipation of 330mW. Packaged in a TO-236-3 surface-mount case, this lead-free and RoHS-compliant component is supplied on tape and reel.
PackageTO-236-3
Current Rating500mA
MountingSurface Mount
PolarityNPN
Quick Jump:
Technical Specifications
Diodes FMMT415TC technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 260V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | 500mA |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 40MHz |
| Height | 1.1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 40MHz |
| DC Rated Voltage | 100V |
| Weight | 0.000282oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes FMMT415TC Datasheet
Download the complete datasheet for Diodes FMMT415TC to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.