NPN bipolar junction transistor for surface mount applications, featuring a 100V collector-emitter breakdown voltage and 500mA continuous collector current. This silicon transistor offers a maximum collector-emitter saturation voltage of 500mV and a 40MHz gain bandwidth product. It operates within a temperature range of -55°C to 150°C and is housed in a compact SOT-23-3 package. RoHS compliant and lead-free.
Frequency40MHz
PackageSOT-23-3
Current Rating500mA
MountingSurface Mount
Quick Jump:
Technical Specifications
Diodes FMMT415TD technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 320V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | 500mA |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 40MHz |
| Height | 1.1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 500mA |
| Max Frequency | 40MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 40MHz |
| DC Rated Voltage | 100V |
| Weight | 0.000282oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes FMMT415TD Datasheet
Download the complete datasheet for Diodes FMMT415TD to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
