NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 100V collector-emitter breakdown voltage and a 500mA continuous collector current. Operates with a 320V collector base voltage and 6V emitter base voltage. Packaged in a TO-236-3 surface mount case, this RoHS and REACH SVHC compliant transistor offers a transition frequency of 40MHz and a maximum power dissipation of 330mW.
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| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 320V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | 500mA |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 40MHz |
| Height | 1.1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 40MHz |
| DC Rated Voltage | 100V |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Compliant |
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