NPN silicon bipolar junction transistor for general-purpose amplification and switching. Features a 1A continuous collector current, 30V collector-emitter breakdown voltage, and 150MHz transition frequency. Housed in a compact SOT-23 surface-mount package, this lead-free component operates across a wide temperature range of -55°C to 150°C. Maximum power dissipation is 500mW.
Frequency150MHz
PackageSOT-23
Current Rating1A
MountingSurface Mount
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Technical Specifications
Diodes FMMT449TA technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
1V
Continuous Collector Current
1A
Current Rating
1A
Emitter Base Voltage (VEBO)
5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
1.1mm
Lead Free
Lead Free
Length
3mm
Max Breakdown Voltage
30V
Max Collector Current
1A
Max Frequency
150MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
150MHz
DC Rated Voltage
30V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes FMMT449TA Datasheet
Download the complete datasheet for Diodes FMMT449TA to view detailed technical specifications.
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