NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 400V collector-emitter breakdown voltage (VCEO) and a continuous collector current of 225mA. Operates with a maximum power dissipation of 500mW and a transition frequency of 50MHz. Packaged in a SOT-23 surface-mount case, this RoHS compliant component is supplied on tape and reel.
Frequency50MHz
PackageSOT-23
Current Rating225mA
MountingSurface Mount
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Technical Specifications
Diodes FMMT458TA technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
400V
Collector Emitter Breakdown Voltage
400V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
400V
Collector-emitter Voltage-Max
500mV
Continuous Collector Current
225mA
Current Rating
225mA
Emitter Base Voltage (VEBO)
5V
Frequency
50MHz
Gain Bandwidth Product
50MHz
Height
1.1mm
Lead Free
Lead Free
Length
3mm
Max Breakdown Voltage
400V
Max Collector Current
225mA
Max Frequency
50MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
50MHz
DC Rated Voltage
400V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes FMMT458TA Datasheet
Download the complete datasheet for Diodes FMMT458TA to view detailed technical specifications.
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